Detailed Placement
نویسنده
چکیده
Sub-resolution assist features (SRAFs) provide an absolutely essential technique for critical dimension (CD) contro1 and process window enhancement in subwavelengt h lithography. However, as focus levels change during manufacturing, CDs at a given Gilegai” pitch can fail t o achieve manufacturing tolerances required for adequate yield. Furthermore, a d o p tion of off-axis illumination (OAI) and SRAF techniques to enhance resolution at minimum pitch worsens printability of patterns at other pitches. This paper describes a novel dynamic programming-based technique for Assist-Feature Correctness (AFCorr) in detailed placement of standard-cell designs. For benchmark designs in 130nm and 90nm technologies, AFCorr achieves improved depth of focus and substantial improvement in CD control wi,h negligible timing, area, or CPU overhead. The advantages of AFCorr are expected to increase in future technology nodes.
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